We aspire to provide the best quality products
Size (mm): 2300(W) x 1770(H) x 750(D)
Up to 10 gases 3 MO sources for gas-phase synthesis.
Motor-controlled movable heater for fast heating cooling (patented).
Fully computer-controlled programmable recipes.
TCVD100 platform: Proven performance for ~100 systems for more than 5 years.
Invited training for full sample preparation processes.
Customers / Demo Sites
IBM Zurich Nanotech Center
Seoul National University Graphene Research Center
Premium Custom-Designed System for TMDC & h-BN
Chemical vapor deposition (CVD) system for the syntheses of 2D materials at scales from a chip to a wafer, including the synthesis of graphene, h-BN, TMDCs on various substrates by use of gas-phase or solid precursors metal-organic (MO) sources.
Furnace ( Heater )
TCVD Controller Panel
TCVD Vacuum/Gas Control
Rotary pump - W2V40 (*RP)
Pumping speed: 400 l/min
Pump oil: fomblin oil
Rotary pump auto vent valve
240 V AC (Normal open type)
Angle valve - NW 40
port, Pneumatic type
MFC (Atovac AFC500)
a. MFC1 : Ar (1000 SCCM)
b. MFC2 : CH4 (200 SCCM)
c. MFC3 : H2 (100 SCCM)
a. Ar input valve
b. CH4 input valve
c. H2 input valve
d. Vent valve
e. Main Gas input valve
Sample Loading End Chamber
Gas Supply End Chamber
Electric Power Panel
TCVD Error Alarm Singnal
TCVD Service Tool Box Components
|CVD Reactor||Tube type 4 inch diameter quartz|
|Substrate Size||Lateral ion of 10 mm to < 4 inch wafers possible. (Loading frames for small samples)|
Rolled metallic foils can be loaded to synthesize A4 sized or larger 2D materials.
|Heating||Dual-zone heater controller for graphene/h-BN synthesis. Single-zone precursor heater Dual-zone|
deposition heater for TMDC synthesis.
The heaters are movable along two rails the distance can be motor-controlled, enabling 10°C/sec or faster temperature change rate.
|Base Pressure||10-5 mbar (depending on the dryness of source)|
|Operating Pressure||10-3 mbar - 1 bar|
|Precursor||Max 10 gas lines (ex. CH4, C2H4, NH3, B2H6, Ar, H2, H2S, H2Se, N2, O2) + 2 extra ports.|
Metal oxide sources of various transition metals placed in Heat Zone 1 for solid source growth.
|Extra 3 Metal-Organic Source Injection Ports are included. (ex Mo(CO)6, Fe(CO)5)|
Low-T cold trap for residual sources
|Flow control||Precursor gases: 0.1 - 10 sccm|
Other gases: 10 - 1000 sccm
Automatic flow control
|Vacuum||Turbo pump 450l/s (ISO160) < 10-6 mbar|
Dry scroll pump < 10-1 mbar
Main Gate Valve Pneumatic type / Fore-line / roughing Angle Valve / Foamed bellows
By-pass pumping adaptor, clamp & centering
|T-measurement||Stard Thermocouple (NIR calibrated)|
|Sample switching||Position switching at sample loading stage|
|System Control||Control PC system (12" touch, dual core)|
Serial Network module (4-ch)
Remote IO module (RS485)
System base programming / System recipe control module / System date file save module
Software upgrade support
Gas valve, angle valve Open/Close / Rotary pump On/Off switch / Main power On/Off switch
Cooling water & air pressure switch